Gate oxide

Gate oxide

The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 - 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse electric field in order to strongly modulate the conductance of the channel.

Above the gate oxide is a thin electrode layer made of a conductor which can be aluminium, a highly doped silicon, a refractory metal such as tungsten, a silicide (TiSi, MoSi, TaSi or WSi) or a sandwich of these layers. This gate electrode is often called gate metal or gate conductor. The geometrical width of the gate conductor electrode (Z, W) is called the gate width. The gate width or geometrical gate width is not to be confused with the conduction channel width or electrical channel width since they are not equal. The conduction channel may be slightly wider due to fringe electric fields at the two width (Z-direction) edges of the gate electrode.

Below the gate oxide is a thin n-type inversion layer on the surface of the p-type semiconductor substrate (for an n-MOS device). It is induced by the oxide electric field from the applied gate voltage VG. This is known as the inversion channel. It is the conduction channel that allows the electrons to flow from the source to the drain. ["Fundamentals of Solid-State Electronics", Chih-Tang Sah. World Scientific, first published 1991, reprinted 1992, 1993 (pbk), 1994, 1995, 2001, 2002, 2006, ISBN 9810206372. -- ISBN 9810206380 (pbk).]

References


Wikimedia Foundation. 2010.

Игры ⚽ Нужно сделать НИР?

Look at other dictionaries:

  • gate oxide — užtūros oksidas statusas T sritis radioelektronika atitikmenys: angl. gate oxide vok. Gate Oxid, n; Gateoxid, n rus. подзатворный оксид, m pranc. oxyde de grille, m …   Radioelektronikos terminų žodynas

  • gate-oxide defect — užtūros oksido defektas statusas T sritis radioelektronika atitikmenys: angl. gate oxide defect vok. Gateoxidfehler, m rus. дефект подзатворного оксида, m pranc. défaut d oxyde de grille, m …   Radioelektronikos terminų žodynas

  • gate-oxide integrity — užtūros oksido vientisumas statusas T sritis radioelektronika atitikmenys: angl. gate oxide integrity vok. Gateoxidintegrität, f rus. целостность подзатворного оксида, f pranc. intégrité d oxyde de grille, f …   Radioelektronikos terminų žodynas

  • Time-dependent gate oxide breakdown — (or time dependent dielectric breakdown) is a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long time application of relatively low electric field (as opposite to immediate breakdown, which is caused by strong… …   Wikipedia

  • Gate-Oxid — užtūros oksidas statusas T sritis radioelektronika atitikmenys: angl. gate oxide vok. Gate Oxid, n; Gateoxid, n rus. подзатворный оксид, m pranc. oxyde de grille, m …   Radioelektronikos terminų žodynas

  • Gate dielectric — A gate dielectric is a dielectric used between the gate and substrate of a field effect transistor. In state of the art processes, the gate dielectric is subject to many constraints, including:* Electrically clean interface to the substrate (low… …   Wikipedia

  • Self-aligned gate — A self aligned gate is a design arrangement where a highly doped gate in a MOSFET is used as a mask for the doping of the source and drain around it. This technique ensures that the gate will always overlap the edges of the source and drain. The… …   Wikipedia

  • Floating-gate transistor — The floating gate transistor is a kind of transistor that is commonly used for non volatile storage such as flash, EPROM and EEPROM memory. Floating gate transistors are almost always floating gate MOSFETs.Floating gate MOSFETs are useful because …   Wikipedia

  • Logic gate — A logic gate is an idealized or physical device implementing a Boolean function, that is, it performs a logical operation on one or more logic inputs and produces a single logic output. Depending on the context, the term may refer to an ideal… …   Wikipedia

  • Double Diffused Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… …   Deutsch Wikipedia

Share the article and excerpts

Direct link
Do a right-click on the link above
and select “Copy Link”