- Semiconductor device
Semiconductor devices are
electronic components that exploit the electronic properties of semiconductormaterials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous stateor thermionic emission in a high vacuum.
Semiconductor devices are manufactured both as single discrete devices and as "
integrated circuits" (ICs), which consist of a number—from a few to millions—of devices manufactured and interconnected on a single semiconductor substrate.
emiconductor device fundamentals
The main reason why semiconductor materials are so useful is that the behaviour of a semiconductor can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric field, by exposure to
light, and even pressure and heat; thus, semiconductors can make excellent sensors. Current conduction in a semiconductoroccurs via mobile or "free" " electrons" and "holes", collectively known as " charge carriers". Doping a semiconductor such as siliconwith a small amount of impurity atoms, such as phosphorusor boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called "p-type", and when it contains excess free electrons it is known as "n-type", where "p" (positive for holes) or "n" (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or "fab", to precisely control the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p-n junctions. Diode
The "p-n junction diode" is a device made from a p-n junction. At the junction of a p-type and an n-type semiconductor there forms a region called the
depletion zonewhich blocks current conduction from the n-type region to the p-type region, but allows current to conduct from the p-type region to the n-type region. Thus when the device is "forward biased", with the p-side at higher electric potential, the diode conducts current easily; but the current is very small when the diode is "reverse biased".
Exposing a semiconductor to
lightcan generate electron–hole pairs, which increases the number of free carriers and its conductivity. Diodes optimized to take advantage of this phenomenon are known as " photodiodes". Compound semiconductordiodes can also be used to generate light, as in light-emitting diodes and laser diodes. Transistor Bipolar junction transistorsare formed from two p-n junctions, in either n-p-n or p-n-p configuration. The middle, or "base", region between the junctions is typically very narrow. The other regions, and their associated terminals, are known as the "emitter" and the "collector". A small current injected through the junction between the base and the emitter changes the properties of the base-collector junction so that it can conduct current even though it is reverse biased. This creates a much larger current between the collector and emitter, controlled by the base-emitter current.
Another type of transistor, the
field effect transistoroperates on the principle that semiconductor conductivity can be increased or decreased by the presence of an electric field. An electric fieldcan increase the number of free electrons and holes in a semiconductor, thereby changing its conductivity. The field may be applied by a reverse-biased p-n junction, forming a "junction field effect transistor", or JFET; or by an electrode isolated from the bulk material by an oxide layer, forming a "metal-oxide-semiconductor field effect transistor", or MOSFET. The MOSFET is the most used semiconductor device today. The "gate" electrode is charged to produce an electric fieldthat controls the conductivity of a "channel" between two terminals, called the "source" and "drain". Depending on the type of carrier in the channel, the device may be an "n-channel" (for electrons) or a "p-channel" (for holes) MOSFET. Although the MOSFET is named in part for its "metal" gate, in modern devices polysiliconis typically used instead.
emiconductor device materials
silicon(Si) is the most widely used material in semiconductor devices. Its combination of low raw material cost, relatively simple processing, and a useful temperature range make it currently the best compromise among the various competing materials. Silicon used in semiconductor device manufacturing is currently fabricated into boules that are large enough in diameter to allow the production of 300 mm (12 in.) wafers. Germanium(Ge) was a widely used early semiconductor material but its thermal sensitivity makes it less useful than silicon. Today, germanium is often alloyed with silicon for use in very-high-speed SiGe devices; IBMis a major producer of such devices. Gallium arsenide(GaAs) is also widely used in high-speed devices but so far, it has been difficult to form large-diameter boules of this material, limiting the wafer diameter to sizes significantly smaller than silicon wafers thus making mass production of GaAs devices significantly more expensive than silicon.
Other less common materials are also in use or under investigation.
Silicon carbide(SiC) has found some application as the raw material for blue light-emitting diodes (LEDs) and is being investigated for use in semiconductor devices that could withstand very high operating temperatures and environments with the presence of significant levels of ionizing radiation. IMPATT diodes have also been fabricated from SiC.
indiumcompounds (indium arsenide, indium antimonide, and indium phosphide) are also being used in LEDs and solid state laser diodes. Selenium sulfideis being studied in the manufacture of photovoltaic solar cells.
List of common semiconductor devices
Avalanche diode(avalanche breakdown diode)
Field effect transistor
*IGBT (Insulated Gate Bipolar Transistor)
*SCR (Silicon Controlled Rectifier)
Hall effect sensor(magnetic field sensor)
Random Access Memory(RAM)
emiconductor device applications
All transistor types can be used as the building blocks of
logic gates, which are fundamental in the design of digital circuits. In digital circuits like microprocessors, transistors act as on-off switches; in the MOSFET, for instance, the voltageapplied to the gate determines whether the switchis on or off.
Transistors used for
analog circuits do not act as on-off switches; rather, they respond to a continuous range of inputs with a continuous range of outputs. Common analog circuits include amplifiers and oscillators.
Circuits that interface or translate between digital circuits and analog circuits are known as mixed-signal circuits.
Power semiconductor devices are discrete devices or integrated circuits intended for high current or high voltage applications. Power integrated circuits combine IC technology with power semiconductor technology, these are sometimes referred to as "smart" power devices. Several companies specialize in manufacturing power semiconductors.
type designators of semiconductor devices are often manufacturer specific. Nevertheless, there have been attempts at creating standards for type codes, and a subset of devices follow those. For discrete devices, for example, there are three standards: JEDECJESD370B in USA, Pro Electronin Europeand JIS in Japan.
History of semiconductor device development
Semiconductors had been used in the electronics field for some time before the invention of the transistor. Around the turn of the 20th century they were quite common as detectors in
radios, used in a device called a " cat's whisker". These detectors were somewhat troublesome, however, requiring the operator to move a small tungsten filament (the whisker) around the surface of a galena(lead sulfide) or carborundum(silicon carbide) crystal until it suddenly started working. Then, over a period of a few hours or days, the cat's whisker would slowly stop working and the process would have to be repeated. At the time their operation was completely mysterious. After the introduction of the more reliable and amplified vacuum tubebased radios, the cat's whisker systems quickly disappeared. The "cat's whisker" is a primitive example of a special type of diode still popular today, called a Schottky diode.
World War II
During World War II,
radarresearch quickly pushed radar receivers to operate at ever higher frequenciesand the traditional tube based radio receivers no longer worked well. The introduction of the cavity magnetronfrom Britain to the United States in 1940 during the Tizard Missionresulted in a pressing need for a practical high-frequency amplifier.
On a whim,
Russell Ohlof Bell Laboratoriesdecided to try a cat's whisker. By this point they had not been in use for a number of years, and no one at the labs had one. After hunting one down at a used radio store in Manhattan, he found that it worked much better than tube-based systems.
Ohl investigated why the cat's whisker functioned so well. He spent most of 1939 trying to grow more pure versions of the crystals. He soon found that with higher quality crystals their finicky behaviour went away, but so did their ability to operate as a radio detector. One day he found one of his purest crystals nevertheless worked well, and interestingly, it had a clearly visible crack near the middle. However as he moved about the room trying to test it, the detector would mysteriously work, and then stop again. After some study he found that the behaviour was controlled by the light in the room–more light caused more conductance in the crystal. He invited several other people to see this crystal, and
Walter Brattainimmediately realized there was some sort of junction at the crack.
Further research cleared up the remaining mystery. The crystal had cracked because either side contained very slightly different amounts of the impurities Ohl could not remove–about 0.2%. One side of the crystal had impurities that added extra electrons (the carriers of electrical current) and made it a "conductor". The other had impurities that wanted to bind to these electrons, making it (what he called) an "insulator". Because the two parts of the crystal were in contact with each other, the electrons could be pushed out of the conductive side which had extra electrons (soon to be known as the "emitter") and replaced by new ones being provided (from a battery, for instance) where they would flow into the insulating portion and be collected by the whisker filament (named the "collector"). However, when the voltage was reversed the electrons being pushed into the collector would quickly fill up the "holes" (the electron-needy impurities), and conduction would stop almost instantly. This junction of the two crystals (or parts of one crystal) created a solid-state diode, and the concept soon became known as semiconduction. The mechanism of action when the diode is off has to do with the separation of
charge carriersaround the junction. This is called a " depletion region".
Development of the diode
Armed with the knowledge of how these new diodes worked, a vigorous effort began in order to learn how to build them on demand. Teams at
Purdue University, Bell Labs, MIT, and the University of Chicagoall joined forces to build better crystals. Within a year germanium production had been perfected to the point where military-grade diodes were being used in most radar sets.
Development of the transistor
After the war,
William Shockleydecided to attempt the building of a triode-like semiconductor device. He secured funding and lab space, and went to work on the problem with Brattain and John Bardeen.
The key to the development of the transistor was the further understanding of the process of the
electron mobilityin a semiconductor. It was realized that if there was some way to control the flow of the electrons from the emitter to the collector of this newly discovered diode, one could build an amplifier. For instance, if you placed contacts on either side of a single type of crystal the current would not flow through it. However if a third contact could then "inject" electrons or holes into the material, the current would flow.
Actually doing this appeared to be very difficult. If the crystal were of any reasonable size, the number of electrons (or holes) required to be injected would have to be very large -– making it less than useful as an
amplifierbecause it would require a large injection current to start with. That said, the whole idea of the crystal diode was that the crystal itself could provide the electrons over a very small distance, the depletion region. The key appeared to be to place the input and output contacts very close together on the surface of the crystal on either side of this region.
Brattain started working on building such a device, and tantalizing hints of amplification continued to appear as the team worked on the problem. Sometimes the system would work but then stop working unexpectedly. In one instance a non-working system started working when placed in water. Ohl and Brattain eventually developed a new branch of
quantum mechanicsknown as surface physicsto account for the behaviour. The electrons in any one piece of the crystal would migrate about due to nearby charges. Electrons in the emitters, or the "holes" in the collectors, would cluster at the surface of the crystal where they could find their opposite charge "floating around" in the air (or water). Yet they could be pushed away from the surface with the application of a small amount of charge from any other location on the crystal. Instead of needing a large supply of injected electrons, a very small number in the right place on the crystal would accomplish the same thing.
Their understanding solved the problem of needing a very small control area to some degree. Instead of needing two separate semiconductors connected by a common, but tiny, region, a single larger surface would serve. The emitter and collector leads would both be placed very close together on the top, with the control lead placed on the base of the crystal. When current was applied to the "base" lead, the electrons or holes would be pushed out, across the block of semiconductor, and collect on the far surface. As long as the emitter and collector were very close together, this should allow enough electrons or holes between them to allow conduction to start.
The first transistor
The Bell team made many attempts to build such a system with various tools, but generally failed. Setups where the contacts were close enough were invariably as fragile as the original cat's whisker detectors had been, and would work briefly, if at all. Eventually they had a practical breakthrough. A piece of gold foil was glued to the edge of a plastic wedge, and then the foil was sliced with a razor at the tip of the triangle. The result was two very closely spaced contacts of gold. When the plastic was pushed down onto the surface of a crystal and voltage applied to the other side (on the base of the crystal), current started to flow from one contact to the other as the base voltage pushed the electrons away from the base towards the other side near the contacts. The point-contact transistor had been invented.
While the device was constructed a week earlier, Brattain's notes describe the first demonstration to higher-ups at Bell Labs on the afternoon of
23 December 1947, often given as the birthdate of the transistor. The "PNP point-contact germanium transistor" operated as a speech amplifier with a power gain of 18 in that trial. Known generally as a point-contact transistortoday, John Bardeen, Walter Houser Brattain, and William Bradford Shockleywere awarded the Nobel Prizein physics for their work in 1956.
Origin of the term "transistor"
Bell Telephone Laboratories needed a generic name for their new invention: "Semiconductor Triode", "Solid Triode", "Surface States Triode" [sic] , "Crystal Triode" and "Iotatron" were all considered, but "transistor", coined by
John R. Pierce, won an internal ballot. The rationale for the name is described in the following extract from the company's Technical Memoranda ( May 28 1948)  calling for votes:
Transistor. This is an abbreviated combination of the words "transconductance" or "transfer", and "varistor". The device logically belongs in the varistor family, and has the transconductance or transfer impedance of a device having gain, so that this combination is descriptive.
Improvements in transistor design
Shockley was upset about the device being credited to Brattain and Bardeen, who he felt had built it "behind his back" to take the glory. Matters became worse when Bell Labs lawyers found that some of Shockley's own writings on the transistor were close enough to those of an earlier 1925 patent by
Julius Edgar Lilienfeldthat they thought it best that his name be left off the patent application.
Shockley was incensed, and decided to demonstrate who was the real brains of the operation. Only a few months later he invented an entirely new type of transistor with a layer or 'sandwich' structure. This new form was considerably more robust than the fragile point-contact system, and would go on to be used for the vast majority of all transistors into the 1960s. It would evolve into the
bipolar junction transistor.
With the fragility problems solved, a remaining problem was purity. Making
germaniumof the required purity was proving to be a serious problem, and limited the number of transistors that actually worked from a given batch of material. Germanium's sensitivity to temperature also limited its usefulness. Scientists theorized that silicon would be easier to fabricate, but few bothered to investigate this possibility. Gordon K. Tealwas the first to develop a working silicon transistor, and his company, the nascent Texas Instruments, profited from its technological edge. Germanium disappeared from most transistors by the late 1960s.
Within a few years, transistor-based products, most notably radios, were appearing on the market. A major improvement in manufacturing yield came when a chemist advised the companies fabricating semiconductors to use
distilled waterrather than tap water: calcium ions were the cause of the poor yields. " Zone melting", a technique using a moving band of molten material through the crystal, further increased the purity of the available crystals.
Wikimedia Foundation. 2010.
Look at other dictionaries:
semiconductor device — puslaidininkinis įtaisas statusas T sritis fizika atitikmenys: angl. semiconductor device vok. Halbleitergerät, n rus. полупроводниковый прибор, m pranc. dispositif à semi conducteur, m … Fizikos terminų žodynas
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
semiconductor device — noun a conductor made with semiconducting material • Syn: ↑semiconductor unit, ↑semiconductor • Hypernyms: ↑conductor • Hyponyms: ↑chip, ↑microchip, ↑ … Useful english dictionary
Semiconductor device fabrication — Semiconductor manufacturing processes 10 µm 1971 3 µm 1975 1.5 µm 1982 … Wikipedia
Semiconductor device modeling — creates models for the behavior of the electrical devices based on fundamental physics, such as the doping profiles of the devices. It may also include the creation of compact models (such as the well known SPICE transistor models), which try to… … Wikipedia
Power semiconductor device — Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronic circuits (switch mode power supplies for example). They are also called power devices or when used in integrated circuits, called power… … Wikipedia
optocoupler semiconductor device — optroninis puslaidininkinis įtaisas statusas T sritis radioelektronika atitikmenys: angl. optocoupler semiconductor device; photo coupled semiconductor device vok. Halbleiterbaustein mit Optokopplerverbindung, m; optrongekoppeltes Halbleitergerät … Radioelektronikos terminų žodynas
photo-coupled semiconductor device — optroninis puslaidininkinis įtaisas statusas T sritis radioelektronika atitikmenys: angl. optocoupler semiconductor device; photo coupled semiconductor device vok. Halbleiterbaustein mit Optokopplerverbindung, m; optrongekoppeltes Halbleitergerät … Radioelektronikos terminų žodynas
microwave semiconductor device — mikrobanginis puslaidininkinis įtaisas statusas T sritis radioelektronika atitikmenys: angl. microwave semiconductor; microwave semiconductor device vok. Mikrowellenhalbleitereinrichtung, f rus. полупроводниковый прибор микроволнового диапазона,… … Radioelektronikos terminų žodynas
electrode of a semiconductor device — puslaidininkinio įtaiso elektrodas statusas T sritis automatika atitikmenys: angl. electrode of a semiconductor device vok. Elektrode eines Halbleiterbauelementes, f rus. электрод полупроводникового прибора, m pranc. électrode d un dispositif à… … Automatikos terminų žodynas