Capacitance voltage profiling

Capacitance voltage profiling

The "CV", or more correctly "C-V", in C-V profiling, stands for capacitance-voltage, and refers to a technique used for characterization of semiconductor materials and devices. The technique uses a metal-semiconductor junction (Schottky barrier) or a p-n junction [J. Hilibrand and R.D. Gold, "Determination of the Impurity Distribution in Junction Diodes From Capacitance-Voltage Measurements", RCA Review, vol. 21, p. 245, June 1960] or a MOSFET to create a depletion region, a region which is empty of conducting electrons and holes, but may contain ionized donors and electrically active defects or "traps". The depletion region with its ionized charges inside behaves like a capacitor. By varying the voltage applied to the junction it is possible to vary the depletion width. The dependence of the depletion width upon the applied voltage provides information on the semiconductor's internal characteristics, such as its doping profile and electrically active defect densities. cite book
author=Alain C. Diebold (Editor)
title=Handbook of Silicon Semiconductor Metrology
year= 2001
publisher=CRC Press
isbn=0824705068
pages=p. 59-60
url=http://books.google.com/books?id=9B7e7rNnZPcC&pg=PA59&dq=metrology+%22capacitance+voltage+%22&as_brr=0&sig=fsNG3ovzjcQQANssiT2kgOh50ug#PPA59,M1] , cite book
author=J.R. Brews and E.H. Nicollian
title=MOS (Metal Oxide Semiconductor) Physics and Technology
year= 2002
publisher=Wiley
isbn=047143079X
url=http://books.google.com/books?as_isbn=047143079X] Measurements may be done at DC, or using both DC and a small-signal AC signal (the "conductance method", cite book
author=Andrzej Jakubowski, Henryk M. Przewłocki
title=Diagnostic Measurements in LSI/VLSI Integrated Circuits Production
year= 1991
publisher=World Scientific
isbn=9810202822
pages=p. 159
url=http://books.google.com/books?id=MfM3VtXhpRwC&pg=PA159&dq=conductance+method&sig=WOWGtIqp5bV9uUe9y0Ca8-2dgwA] ), or using a large-signal transient voltage. cite book
author=Sheng S. Li and Sorin Cristoloveanu
title=Electrical Characterization of Silicon-On-Insulator Materials and Devices
year= 1995
publisher=Springer
isbn=0792395484
pages=Chapter 6, p. 163
url=http://books.google.com/books?id=AAr0_xwg9SgC&pg=PA163&dq=DLTS&as_brr=0&sig=tMicHzXLMpo0U6ezA5Hu10VDRS8]

See also

* Depletion region
* Metal–oxide–semiconductor structure
* Depletion width
* Deep-level transient spectroscopy

References and notes


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