- Aluminium gallium indium phosphide
Aluminium gallium indium phosphide (AluminumGalliumIndiumPhosphorus, also AlInGaP, InGaAlP, etc.) is a
AlGaInP is used in manufacture of
light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructureemitting light. It is also used to make diode lasers.
AlGaInP layer is often grown by
heteroepitaxyon gallium arsenideor gallium phosphidein order to form a quantum wellstructure.
afety and toxicity aspects
The toxicology of AlInGaP has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium indium gallium phosphide sources (such as
trimethylgallium, trimethylindiumand phosphine) and industrial hygiene monitoring studies of standard MOVPEsources have been reported recently in a review [Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors; D V Shenai-Khatkhate, R Goyette, R L DiCarlo and G Dripps, Journal of Crystal Growth, vol. 1-4, pp. 816-821 (2004); doi|doi:10.1016/j.jcrysgro.2004.09.007] .
Gallium indium phosphide
Aluminium gallium phosphide
Indium gallium arsenide phosphide
2. Band structure parameters of quaternary phosphide semiconductor alloys investigated by magneto-optical spectroscopy, I J Griffin, D Wolverson, J J Davies, M Emam-Ismail, J Heffernan, A H Kean, S W Bland and G Duggan, Semicond. Sci. Technol. vol. 15 pp. 1030-1034 (2000) doi|10.1088/0268-1242/15/11/303
3. "High Brightness Light Emitting Diodes":G. B. Stringfellow and M. George Craford, Semiconductors and Semimetals, vol. 48, pp. 97-226.
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