- Float-zone silicon
Float-zone silicon is a high-purity alternative to
silicongrown by the Czochralski process. The concentrations of impurities, such as carbonand oxygen, are extremely low. Impurities such as nitrogen, which are thought to bring about an improvement in mechanical strength of the wafers, are now being intentionally added during the growth stages.
Float-zone silicon is typically used for power devices and detector applications. The dimensions of float-zone wafers are generally less than 150mm due to the
surface tensionlimitations during growth.An RF field is used to produce a local melted zone on the polycrystalline rod that is dragged from one end to the other. Seed crystal is used at one end in order to start the growth. This molten zone carries the impurities away with it and hence reduces impurity concentration (impurities are more soluble in the melt than the crystal).
Float-zone silicon is highly transparent to terahertz radiation, and is usually used to fabricate optical components, such as lenses and windows, for terahertz applications.
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