Crocus Technology

Crocus Technology
Crocus Technology
Type Private
Industry Semiconductors
Founded 2004
Headquarters Grenoble, France
Sunnyvale, California
Key people

Dr. Bertrand F. Cambou, (Chairman & CEO)
Amitay Levi, (VP Tech. Development)
Barry Hoberman, (Chief Marketing Officer)
Wayne Godwin, (VP Worldwide Sales)
Jean-Luc Sentis, (VP Worldwide Operations)

Douglas Lee, (VP System Strategy & Corporate Product Development)
Products General purpose and specialty memory chips and technology
Employees ~30

Crocus Technology, founded in 2004, is a venture-capital-backed semiconductor startup company developing next generation magnetoresistive random access memory (MRAM) technology. The company's products originated in a Grenoble-based Spintec laboratory. They company licenses its technology for both stand alone and embedded chip applications.


Company History

Crocus Technology was founded in Grenoble in 2004, to research MRAM at the Spintec laboratory.[1] The company eventually moved its headquarters to Sunnyvale, CA, but retained its engineering base in Grenoble.

Products and technologies

Crocus Technology is a supplier of semiconductor memory chips. The company is also a licensor licensor of MRAM process and design technology to fabless semiconductor companies, wafer foundries, and integrated device manufacturers (IDM’s). Target applications include storage, telecommunications, mobile devices, and networking.

Crocus introduced the application of Thermal Assisted Switching (TAS) to scalable MRAM technology. The technology addresses the problems of write selectivity, power consumption and thermal stability that other MRAM products face. TAS solves those problems mainly through temperature manipulation of the magnetic susceptibility in the memory cell. The company is working to merge TAS technology with advanced Spin Torque Transfer (STT) technology for use with advanced feature-size semiconductor processes.


In intellectual property, the company possesses approximately 30 patents supporting the product and technology portfolio. Crocus also has a long-term exclusive license to MRAM-related intellectual property developed at Spintec,[2] CNRS, and CEA.

Joint ventures

On June 22, 2011, Crocus announced a new technology called Magnetic-Logic Unit (MLU) architecture, built on their existing Thermal Assisted Switching (TAS) technology. This technology can be used to make ultra-secure functions such as smart cards, identity cards, SIM cards, and near-field communications (NFC) tamper-proof. The technology can operate at very high temperatures, making it useful in automotive and industrial electronics. MLU has the potential to replace a variety of other memory technologies such as SRAM, DRAM, NAND, NOR, and OTP.

On May 17, 2011, Crocus announced a joint venture with Rusnano, a Russian state-owned technology investment fund. The new venture, Crocus Nano Electronics (CNE) plans to invest US$125 million to build an advanced MRAM manufacturing plant in Russia.[3] Additional funding to a projected total of US$300 million will be used to expand capacity of the plant after it begins production.[4][5]

On June 18, 2009, Crocus Technology announced a partnership with Tower Semiconductor, Ltd., a leading global specialty foundry. As part of the deal, both companies will dedicate special equipment in Tower’s factory, and Tower will fully manufacture Crocus’ MRAM technology in its 200mm Fab2 facility. Tower has also taken a $1.25 million equity position in Crocus.

On October 6, 2011, Crocus Technology announced that it had signed an agreement with IBM to co-develop semiconductor technology in MRAM.[6]


Major investors include Rusnano, a Russian government-funded corporation that is aimed at commercializing developments in nanotechnology, and CEA Investissement, a company under the CEA that specializes in seed technology companies.

Other investors include Idinvest Partners,[7] CDC Innovation,[8] Entreprises et Patriomoine,[9] NanoDimension,[10] Sofinnova Partners, Sofinnova Ventures, and Ventech.


  1. ^ Mark LaPedus, EE Times. "Russia backs MRAM startup in $300M deal." May 17, 2011. Retrieved October 24, 2011.
  2. ^ "Spintec". EU Who's Who of Data Storage & Memory Technology. Wide Integrated Technologies Diffusion at University of Exeter. Retrieved July 14, 2011.
  3. ^ LaPedus, Mark and Peter Clarke. "Russia backs MRAM startup in $300M deal". EE Times. May 17, 2011. Retrieved July 14, 2011.
  4. ^ Bases, Daniel. "Russia secures new MRAM chip plant with investment". Reuters. May 16, 2011. Retrieved July 14, 2011.
  5. ^ Clark, Don. "Chip Start-Up Joins With Russia In Memory Deal". The Wall Street Journal. May 17, 2011. Retrieved July 14, 2011.
  6. ^ Peter Clarke, EDN. "Crocus signs IBM as MRAM partner." October 6, 2011. Retrieved October 24, 2011.
  7. ^ "Idinvest Partners". 2011. Retrieved July 18, 2011.
  8. ^ "CDC Innovation". 2011. Retrieved July 18, 2011.
  9. ^ “Entreprises et Patriomoine”. 2011. Retrieved Aug. 2, 2011.
  10. ^ "NanoDimension". 2011. Retrieved July 20, 2011.

External links

Wikimedia Foundation. 2010.

См. также в других словарях:

  • Crocus (disambiguation) — Crocus is a genus of perennial flowering plants. Crocus may also refer to: 1220 Crocus, a main belt asteroid Autumn crocus (medicinal plant), a medicinal plant in the Colchicaceae family Crocus (person) (4th century), leader of the Alamanni… …   Wikipedia

  • Magnetoresistive random access memory — Computer memory types Volatile RAM DRAM (e.g., DDR SDRAM) SRAM In development T RAM Z RAM TTRAM Historical Delay line memory Selectron tube Williams tube Non volatile …   Wikipedia

  • Nano-RAM — Computer memory types Volatile RAM DRAM (e.g., DDR SDRAM) SRAM In development T RAM Z RAM TTRAM Historical Delay line memory Selectron tube Williams tube Non volatile …   Wikipedia

  • Non-volatile random-access memory — Computer memory types Volatile RAM DRAM (e.g., DDR SDRAM) SRAM In development T RAM Z RAM TTRAM Historical Delay line memory Selectron tube Williams tube Non volatile …   Wikipedia

  • Spintronics — (a neologism meaning spin transport electronics [1][2]), also known as magnetoelectronics, is an emerging technology that exploits both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental… …   Wikipedia

  • Non-volatile memory — Computer memory types Volatile RAM DRAM (e.g., DDR SDRAM) SRAM In development T RAM Z RAM TTRAM Historical Delay line memory Selectron tube Williams tube Non volatile …   Wikipedia

  • Random-access memory — RAM redirects here. For other uses of the word, see Ram (disambiguation). Example of writable volatile random access memory: Synchronous Dynamic RAM modules, primarily used as main memory in personal computers, workstations, and servers …   Wikipedia

  • Magnetic storage — and magnetic recording are terms from engineering referring to the storage of data on a magnetized medium. Magnetic storage uses different patterns of magnetization in a magnetizable material to store data and is a form of non volatile memory.… …   Wikipedia

  • Nano-RAM — Типы компьютерной памяти Энергозависимая DRAM (в том числе DDR SDRAM) SRAM Перспективные T RAM Z RAM TTRAM Из истории Память на линиях задержки Запоминающая электронстатическая трубка Запоминающая ЭЛТ Энергонезависимая ПЗУ …   Википедия

  • спинтроника — Термин спинтроника Термин на английском spintronics Синонимы магнетоэлектроника , спиновая электроника, magneto electronics Аббревиатуры Связанные термины гигантское магнетосопротивление, туннельное магнетосопротивление Определение область… …   Энциклопедический словарь нанотехнологий

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