MIL-STD-883


MIL-STD-883

The MIL-STD-883 standard establishes uniform methods, controls, and procedures for testing microelectronic devices suitable for use within Military and Aerospace electronic systems including basic environmental tests to determine resistance to deleterious effects of natural elements and conditions surrounding military and space operations; mechanical and electrical tests; workmanship and training procedures; and such other controls and constraints as have been deemed necessary to ensure a uniform level of quality and reliability suitable to the intended applications of those devices. For the purpose of this standard, the term "devices" includes such items as monolithic, multichip, film and hybrid microcircuits, microcircuit arrays, and the elements from which the circuits and arrays are formed. This standard is intended to apply only to microelectronic devices.[1]

Contents

Environmental tests, methods 1001-1034

Barometric pressure, reduced (altitude operation); Immersion; Insulation resistance; Moisture resistance; Steady state life; Intermittent life; Agree life; Stabilization bake; Salt atmosphere; Temperature cycling; Thermal shock; Thermal characteristics; Dew point; Seal; Burn-in test; Life/reliability characterization tests; Neutron irradiation; Internal gas analysis; Ionizing radiation (total dose) test procedure; Dose rate induced latchup test procedure; Dose rate upset testing of digital microcircuits; Mosfet threshold voltage; Dose rate response of linear microcircuits; Preseal burn-in; Thin film corrosion test; Package induced soft error test procedure; Endurance life test; Die penetrant test

Mechanical tests, methods 2001-2036

Constant acceleration; Mechanical shock; Solderability; Lead integrity; Vibration fatigue; Vibration noise; Vibration, variable frequency; Visual and mechanical; External visual; Internal visual (monolithic); Bond strength (bond pull test); Radiography; Internal visual inspection for DPA; Internal visual and mechanical; Resistance to solvents; Physical dimensions; Internal visual (hybrid); Scanning electron microscope (SEM) inspection of metallization; Die shear strength; Particle impact noise detection test (PIND); Glassivation layer integrity; Wetting balance solderability; Nondestructive bond pull; Lid torque for glass-frit-sealed packages; Adhesion of lead finish; Random vibration; Substrate attach strength; Pin grid package destructive lead pull test; Ceramic chip carrier bond strength; Ultrasonic inspection of die attach; Flip chip pull-off test; Visual inspection of passive elements; Ultrasonic inspection of TAB bonds; Resistance to soldering heat.

Electrical tests (digital), methods 3001-3024

Drive source, dynamic; Load conditions; Delay measurements; Transition time measurements; Power supply current; High level output voltage; Low level output voltage; Breakdown voltage, input or output; Input current, low level; Input current, high level; Output short circuit current; Terminal capacitance; Noise margin measurements for digital microelectronic devices; Functional testing; Electrostatic discharge sensitivity classification; Activation time verification; Microelectronics package digital signal transmission; Crosstalk measurements for digital microelectronic device packages; Ground and power supply impedance measurements for digital microelectronics device packages; High impedance (off-state) low-level output leakage current; High impedance (off-state) high-level output leakage current; Input clamp voltage; Static latch-up measurements for digital CMOS microelectronic devices; Simultaneous switching noise measurements for digital microelectronic devices.

Electrical tests (linear), methods 4001-4007

Input offset voltage and current and bias current; Phase margin and slew rate measurements; Common mode input voltage range; Common mode rejection ratio; Supply voltage rejection ratio; Open loop performance; Output performance; Power gain and noise figure; Automatic gain control range.

Test procedures, methods 5001-5013

Parameter mean value control; Parameter distribution control; Failure analysis procedures for microcircuits; Screening procedures; Qualification and quality conformance procedures; Limit testing; Wafer lot acceptance; Test procedures for hybrid and multichip microcircuits; Destructive physical analysis; Test procedures for custom monolithic microcircuits; Evaluation and acceptance procedures for polymeric adhesives; Fault coverage measurement for digital microcircuits; Wafer fabrication control and wafer acceptance procedures for processed GaAs wafers.

References and external links

Notes


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