- Aluminium gallium arsenide
Aluminium gallium arsenide (also aluminum gallium arsenide) (AlxGa1-xAs) is a
semiconductor materialwith very nearly the same lattice constantas GaAs, but a larger bandgap. The "x" in the formula above is a number between 0 and 1 - this indicates an arbitrary alloybetween GaAs and AlAs.
The formula "AlGaAs" should be considered an abbreviated form of the above, rather than any particular ratio.
Aluminium gallium arsenide is used as a barrier material in GaAs based heterostructure devices. The AlGaAs layer confines the electrons to a gallium arsenide region. An example of such a device is a quantum well infrared photodetector (
afety and toxicity aspects
The toxicology of AlGaAs has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium gallium arsenide sources (such as
trimethylgalliumand arsine) and industrial hygiene monitoring studies of standard MOVPEsources have been reported recently in a review [Journal of Crystal Growth (2004); doi|10.1016/j.jcrysgro.2004.09.007] .
* [http://www.ioffe.ru/SVA/NSM/Semicond/AlGaAs/index.html Extensive site on the physical properties of aluminium gallium arsenide]
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