Indium(III) phosphide

Chembox new
Name = Indium(III) phosphide
ImageFile = Indium(III) phosphide.jpg
ImageSize = 200px
ImageName = Indium(III) phosphide
IUPACName = Indium phosphide
OtherNames = Indium(III) phosphide
Name =
Section1 = Chembox Identifiers
CASNo = 22398-80-7

Section2 = Chembox Properties
Formula = InP
MolarMass = 145.792 g/mol
Appearance = Black cubic crystals.
Density = 4.81 g/cm3, solid.
Solubility = ? g/100 ml (?°C)
MeltingPt = 1062°C (1335.15 K)
BoilingPt = No information.

Section3 = Chembox Structure
MolShape =
Coordination =
CrystalStruct = Zinc Blende
Dipole =

Section7 = Chembox Hazards
MainHazards = In Compounds: Highly toxic via subcutaneous and moderately toxic via oral routes. Symptoms of acute indium intoxicationare anorexia, localized convulsive motions, hind-leg paralysis, pulmonary edema, necrotizing pneumonia, and renal and hepaticdamage with resultant dysfunction. Chronic indium intoxication leads to weight loss, poor growth, and extensive necrotic damage tothe liver and kidneys.

Section8 = Chembox Related
OtherAnions = InN, InAs, InSb.
OtherCations = Gallium phosphide,
Aluminium phosphide
Function = compounds
OtherFunctn = Gallium arsenide phosphide

Indium phosphide (IndiumPhosphorus) is a binary semiconductor composed of indium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.

InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.

Optical properties

The Sellmeier equation that describes how the optical refractive index for indium phosphide depends on wavelength is given byn^2(lambda) = 7.255+ frac{2.316 lambda^2 }{ lambda^2 - 0.6263^2}+ frac{2.765 lambda^2 }{ lambda^2 - 32.935^2},where λ is the wavelength in micrometres.

This gives refractive index values rising from around 3.21 at 10 µm and 3.32 at 1.5 µm to 3.47 at 1.0 µm.

References

External links

* [http://www.ioffe.ru/SVA/NSM/Semicond/InP/index.html Extensive site on the physical properties of indium phosphide] (Ioffe institute)
* [http://www.onr.navy.mil/sci%5Ftech/archive%5Fto%5Fdvd/information/312%5Felectronics/ncsr/materials/inp.asp ONR National Compound Semiconductor Roadmap entry]
* [http://ieeexplore.ieee.org/xpl/RecentCon.jsp?punumber=3525 InP conference series] at IEEE
* [http://www.azom.com/details.asp?newsID=2888 Indium Phosphide and Indium Gallium Arsenide Help Break 600 Gigahertz Speed Barrier] (2006 news)

uppliers

* [http://www.wafertech.co.uk/msds/msds_InP.html MSDS at Wafertech]
* [http://www.espimetals.com/msds's/indiumphosphide.pdf MSDS ar espimetals] (pdf)
* [http://www.arnaudelectronics.com/product/inp.html Arnaud electronics single crystal wafers]
* [http://www.wafertech.co.uk/data/polyInP.html Wafer technology polycrystalline]
* [http://www.vitesse.com/technologies/index.php?id=3 Vitesse DARPA funded 150GHz circuits]


Wikimedia Foundation. 2010.

Look at other dictionaries:

  • indium(III) phosphide — indžio(III) fosfidas statusas T sritis chemija formulė InP atitikmenys: angl. indium(III) phosphide rus. индия(III) фосфид …   Chemijos terminų aiškinamasis žodynas

  • Indium gallium phosphide — (InGaP) is a semiconductor composed of indium, gallium and phosphorus. It is used in high power and high frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium… …   Wikipedia

  • Indium(III) arsenide — Chembox new Name = Indium(III) arsenide ImageFile = Indium(III) arsenide.jpg ImageName = Indium(III) arsenide OtherNames = indium arsenide, indium monoarsenide Section1 = Chembox Identifiers CASNo = 1303 11 3 Section2 = Chembox Properties Formula …   Wikipedia

  • Indium(III) nitride — Chembox new Name = Indium(III) nitride ImageFile = ImageName = OtherNames = Section1 = Chembox Identifiers CASNo = 25617 98 5 Section2 = Chembox Properties Formula = InN MolarMass = Density = Solvent = SolubleOther = MeltingPt = BoilingPt =… …   Wikipedia

  • Gallium(III) phosphide — Chembox new ImageFile = ImageSize = IUPACName = Gallium(III) phosphide OtherNames = Section1 = Chembox Identifiers CASNo = 12063 98 8 PubChem = SMILES = Section2 = Chembox Properties Ga = 1 | P = 1 Formula = MolarMass = Appearance = Density = 4.1 …   Wikipedia

  • Indium gallium nitride — (InGaN, IndiumxGallium1 xNitrogen) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its band gap can be tuned by varying the amount of… …   Wikipedia

  • Indium — Not to be confused with Iridium. cadmium ← indium → tin Ga ↑ In ↓ Tl …   Wikipedia

  • Indium — Eigenschaften …   Deutsch Wikipedia

  • III-V-Halbleiter — Gruppe 13 14 15 Periode Schale 2 …   Deutsch Wikipedia

  • III/V-Halbleiter — Gruppe 13 14 15 Periode Schale 2 …   Deutsch Wikipedia

Share the article and excerpts

Direct link
Do a right-click on the link above
and select “Copy Link”